IndiumV1, Main, Exploration, bibRecord, 000066

Controlled beam dry etching of InP by using Br2-N2 Gas

Identifieur interne : 000066 ( Main/Exploration ); précédent : 000065; suivant : 000067

Controlled beam dry etching of InP by using Br2-N2 Gas

Auteurs : RBID : ISTEX:11664_1996_Article_BF02666508.pdf

Descripteurs français

Wicri :
- topic : Brome, Azote.

English descriptors

KwdEn :
- Bromine, Corner mirror, Dry etching, Indium phosphide, Nitrogen, Reactive ion beam etching, Secondary electron, Waveguide.

Abstract

Indium phosphide dry etching is carried out using a reactive beam extracted from a Br2-N2 gas discharge plasma. Keeping the N2 gas pressure constant at 0.23 mTorr, the Br2 gas pressure was varied from 0 to 0.1 mTorr and the sample temperature was varied from 40 to 200°C. The etched shapes and etching rates are investigated in terms of the etching beam composition. Two distinct types of etching mechanisms come into play depending on the Br2 gas pressure. Smooth vertical side walls and a temperature independent etching rate can be obtained at a Br2 gas pressure of 0.04 mTorr or less and a temperature above 100°C, where the etching is induced by the ambient Br2 gas species and N2 beam. Undercut etching with a temperature dependent etching rate is seen at a Br2 gas pressure of 0.07 mTorr or higher, where the etching beam contains both N2 and Br2 gas species. Neutralized Br species generated by the discharge of the Br2 gas are shown to form the undercut. A waveguide corner mirror with a loss of less than 1 dB is made by using an etching beam with no neutralized Br species.

DOI: 10.1007/BF02666508

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Le document en format XML

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<author><name>Satoshi Oku</name>
<affiliation wicri:level="1"><mods:affiliation>NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa, Japan</mods:affiliation>
<country xml:lang="fr">Japon</country>
<wicri:regionArea>NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa</wicri:regionArea>
<wicri:noRegion>Kanagawa</wicri:noRegion>
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<author><name>Yasuo Shibata</name>
<affiliation wicri:level="1"><mods:affiliation>NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa, Japan</mods:affiliation>
<country xml:lang="fr">Japon</country>
<wicri:regionArea>NTT Opto-electronics Laboratories, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa</wicri:regionArea>
<wicri:noRegion>Kanagawa</wicri:noRegion>
</affiliation>
</author>
<author><name>Kenichi Ochiai</name>
<affiliation wicri:level="1"><mods:affiliation>NTT Advanced Technology, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa, Japan</mods:affiliation>
<country xml:lang="fr">Japon</country>
<wicri:regionArea>NTT Advanced Technology, 3-1 Morinosato Wakamiya, Atsugi-shi, 243-01, Kanagawa</wicri:regionArea>
<wicri:noRegion>Kanagawa</wicri:noRegion>
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<date when="1996">1996</date>
<idno type="doi">10.1007/BF02666508</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bromine</term>
<term>Corner mirror</term>
<term>Dry etching</term>
<term>Indium phosphide</term>
<term>Nitrogen</term>
<term>Reactive ion beam etching</term>
<term>Secondary electron</term>
<term>Waveguide</term>
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<keywords scheme="Wicri" type="topic" xml:lang="fr"><term>Brome</term>
<term>Azote</term>
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<front><div type="abstract" xml:lang="eng">Indium phosphide dry etching is carried out using a reactive beam extracted from a Br2-N2 gas discharge plasma. Keeping the N2 gas pressure constant at 0.23 mTorr, the Br2 gas pressure was varied from 0 to 0.1 mTorr and the sample temperature was varied from 40 to 200°C. The etched shapes and etching rates are investigated in terms of the etching beam composition. Two distinct types of etching mechanisms come into play depending on the Br2 gas pressure. Smooth vertical side walls and a temperature independent etching rate can be obtained at a Br2 gas pressure of 0.04 mTorr or less and a temperature above 100°C, where the etching is induced by the ambient Br2 gas species and N2 beam. Undercut etching with a temperature dependent etching rate is seen at a Br2 gas pressure of 0.07 mTorr or higher, where the etching beam contains both N2 and Br2 gas species. Neutralized Br species generated by the discharge of the Br2 gas are shown to form the undercut. A waveguide corner mirror with a loss of less than 1 dB is made by using an etching beam with no neutralized Br species.</div>
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<abstract lang="eng">Indium phosphide dry etching is carried out using a reactive beam extracted from a Br2-N2 gas discharge plasma. Keeping the N2 gas pressure constant at 0.23 mTorr, the Br2 gas pressure was varied from 0 to 0.1 mTorr and the sample temperature was varied from 40 to 200°C. The etched shapes and etching rates are investigated in terms of the etching beam composition. Two distinct types of etching mechanisms come into play depending on the Br2 gas pressure. Smooth vertical side walls and a temperature independent etching rate can be obtained at a Br2 gas pressure of 0.04 mTorr or less and a temperature above 100°C, where the etching is induced by the ambient Br2 gas species and N2 beam. Undercut etching with a temperature dependent etching rate is seen at a Br2 gas pressure of 0.07 mTorr or higher, where the etching beam contains both N2 and Br2 gas species. Neutralized Br species generated by the discharge of the Br2 gas are shown to form the undercut. A waveguide corner mirror with a loss of less than 1 dB is made by using an etching beam with no neutralized Br species.</abstract>
<subject lang="eng"><genre>Key words</genre>
<topic>Bromine</topic>
<topic>corner mirror</topic>
<topic>dry etching</topic>
<topic>indium phosphide</topic>
<topic>nitrogen</topic>
<topic>reactive ion beam etching</topic>
<topic>secondary electron</topic>
<topic>waveguide</topic>
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Controlled beam dry etching of InP by using Br2-N2 Gas

Controlled beam dry etching of InP by using Br2-N2 Gas

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri